Solid state devices having fine pitch structures

ABSTRACT

In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of U.S. ProvisionalPatent Application Ser. No. 61/725,620, filed on Nov. 13, 2012, which ishereby incorporated herein by reference in its entirety.

TECHNICAL FIELD

Embodiments of the present invention relate to the manufacture andprocessing of semiconductor wafers, and more particularly to methods forforming devices having very fine pitch features.

BACKGROUND

Today's electronic devices contain sophisticated circuits, many of whichhave been made possible by fabricating highly dense arrays of conductorsand components. These conductors and components are typically fabricatedby using photolithographic techniques. As the demand for more complexcircuits (and higher capacity in memory devices made from these complexcircuits) increases, however, the need to form even finer featuresrises. In the case of memory devices, higher-capacity storage requiresfiner conductors and spacing.

The limits to photolithographic techniques are related to the desiredfeature size and the wavelength of the light used to project an image onthe semiconductor substrate. This projection is performed usingreticules that can be very costly to produce. For this reason, it isdesirable to limit the number of reticules required. As the extremelimits of the photolithographic process are approached, however, thespreading of the edges of the projected images can cause artifacts wherethese edges overlap and form undesired projected images due to theadditive nature of the process. One way to avoid this effect is tomaintain a greater spacing between desired features so as to avoid theedge overlapping. This greater spacing prevents the tight packing oflines desired for high density memory arrays, however.

A technique to retain the tight packing of lines while avoiding thisadditive edge effect is double-patterning, a technique in which one maskis used to project the image of only a subset of desired features (e.g.,even-numbered array lines), thereby leaving wider spacing between thoseeven lines so as to avoid the additive edge effect. A second mask isthen used to project the remaining features (e.g., odd-numbered arraylines, centered in the spaces between the even-numbered lines) and thuscreate the desired high density packing. The downside to this techniqueis the increase in the number of required masks.

In the case of diode-array memories in particular, the need for smallerdiode formation to fit within the pattern of finer conductors andspacing introduces additional problems. For example, the verticallyformed diode at each memory cell location is sometimes created byoverlapping a row and column line thereby forming a square (or nearlysquare) feature which is the footprint of the vertical diode. However,in those methods in which the square feature is a hole in which a diodeis grown, the corners can cause the formation of stacking faults whilesilicon is epitaxially grown in the holes. Also, these corners can be asource of current leakage in the formed diodes during operation. Inaddition, the information-storage element formed using the diode of adiode-array memory must have a consistent dimension across all instancesof the element across die in order to prevent variations in theoperating parameters that would render both the programming voltages andcurrents as well as the read threshold between a one bit and a zero bitdifficult to calibrate. A need therefore exists for a way to createhigh-density arrays of elements using a minimum number of masks.

SUMMARY

Embodiments of the present invention include creation of tightly packedfeatures required for (e.g.) high-density diode array memories (or anyother similar structures) without the need for high-densityphotolithographic masks or double-patterning, and also the creation ofdiodes without corners from the overlap of a tightly packed row featurewith a tightly packed column feature. In one embodiment, a plurality ofrows of hardmask material are created using a photolithographic step;the rows are spaced out to correspond to only every other bit orwordline in an array. The remaining rows (placed in-between thephotolithographic rows) are formed via deposition of the hardmaskmaterial after, in one embodiment, deposition of another material tocreate sidewall “cushion” spaces adjacent to the photolithographic rows.In another embodiment, a plurality of rows of insulating material arecreated in a photolithographic step, again corresponding to only everyother bit or wordline in an array. A layer of hardmask material is thendeposited on the rows of insulating material such that sidewalls ofhardmask material are grown laterally from the rows of insulatingmaterial.

In one aspect, a method for forming an array includes forming aplurality of rows of hardmask material above one or more layers ofinsulating material, forming a plurality of columns of hardmask materialabove the plurality of rows of hardmask material, etching holes in theone or more layers of insulating material using the combined maskingproperties of the rows of hardmask material and the columns of hardmaskmaterial, and forming memory cells in the holes.

A first subset of the plurality of rows may be formed by a lithographicstep and wherein a second subset of the plurality of rows are thereafterformed by a deposition step. The first subset of the plurality of rowsmay be separated by a distance corresponding to double a distancebetween array bitlines, and wherein the second subset of the pluralityof rows are deposited between the first subset of the plurality of rows.The deposition step may include forming sidewall hardmask features onthe sides the first subset of the plurality of rows and depositing thesecond subset of the plurality of rows, wherein a thickness of sidewallmaterial in the sidewall hardmask features is defined by the depositionstep. Forming the plurality of rows of hardmask material may includeforming a plurality of rows of insulating material and depositing alayer of hardmask material on top of the plurality of rows of insulatingmaterial. A first subset of the plurality of columns may be formed by alithographic step and wherein a second subset of the plurality ofcolumns are thereafter formed by a deposition step. The deposition stepmay include forming sidewall hardmask features on the sides the firstsubset of the plurality of columns and depositing the second subset ofthe plurality of columns; wherein a thickness of sidewall material inthe sidewall hardmask features may be defined by the deposition step.Etching the holes may include performing a selective etch of theinsulating material, wherein the insulating material may include atleast two different types of insulating materials, and whereinselectively etched hole may include a first diameter etched in a firsttype of insulating material and a second diameter larger than the firstdiameter etched in a second type of insulating material. An electroniccircuit in electrical communication with the array may be formed.

In another aspect, An electronic circuit in the form of an arrayincludes features that have been formed by forming a plurality of rowsof hardmask material above one or more layers of insulating material,forming a plurality of columns of hardmask material above the pluralityof rows of hardmask material, etching holes in the one or more layers ofinsulating material using the combined masking properties of the rows ofhardmask material and the columns of hardmask material, and formingmemory cells in the holes.

A first subset of the plurality of rows may be formed by a lithographicstep and wherein a second subset of the plurality of rows are thereafterformed by a deposition step. The deposition step may include formingsidewall hardmask features on the sides the first subset of theplurality of rows and depositing the second subset of the plurality ofrows, wherein a thickness of sidewall material in the sidewall hardmaskfeatures is defined by the deposition step. A first subset of theplurality of columns may be formed by a lithographic step and wherein asecond subset of the plurality of columns are thereafter formed by adeposition step. The deposition step may include forming sidewallhardmask features on the sides the first subset of the plurality ofcolumns and depositing the second subset of the plurality of columns,wherein a thickness of sidewall material in the sidewall hardmaskfeatures is defined by the deposition step.

In another aspect, an electronic system includes one or more arraycircuits; the array circuits include features that have been formed byforming a plurality of rows of hardmask material above one or morelayers of insulating material, forming a plurality of columns ofhardmask material above the plurality of rows of hardmask material,etching holes in the one or more layers of insulating material using thecombined masking properties of the rows of hardmask material and thecolumns of hardmask material, and forming memory cells in the holes.

A first subset of the plurality of rows may be formed by a lithographicstep and wherein a second subset of the plurality of rows are thereafterformed by a deposition step. The deposition step may include formingsidewall hardmask features on the sides the first subset of theplurality of rows and depositing the second subset of the plurality ofrows, wherein a thickness of sidewall material in the sidewall hardmaskfeatures is defined by the deposition step. A first subset of theplurality of columns may be formed by a lithographic step and wherein asecond subset of the plurality of columns are thereafter formed by adeposition step. The deposition step may include forming sidewallhardmask features on the sides the first subset of the plurality ofcolumns and depositing the second subset of the plurality of columns,wherein a thickness of sidewall material in the sidewall hardmaskfeatures is defined by the deposition step. The holes in which memorycells are formed may have corners and these corners may be rounded.

These and other objects, along with advantages and features of thepresent invention herein disclosed, will become more apparent throughreference to the following description, the accompanying drawings, andthe claims. Furthermore, it is to be understood that the features of thevarious embodiments described herein are not mutually exclusive and canexist in various combinations and permutations.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. In the following description,various embodiments of the present invention are described withreference to the following drawings, in which:

FIG. 1 illustrates wafer including doped bit lines in a substrate inaccordance with an embodiment of the present invention;

FIG. 2 illustrates the wafer after the deposition of layers of materialsin accordance with an embodiment of the present invention;

FIG. 3 illustrates the wafer after patterning and etching a top layer inaccordance with an embodiment of the present invention;

FIG. 4 illustrates the wafer after applying a conformal coating inaccordance with an embodiment of the present invention;

FIG. 5 illustrates the wafer after anisotropic etch-back of theconformal coating in accordance with an embodiment of the presentinvention;

FIG. 6 illustrates the wafer after material deposition and planarizationin accordance with an embodiment of the present invention;

FIG. 7 illustrates the wafer after material deposition in accordancewith an embodiment of the present invention;

FIG. 8 illustrates the wafer after patterning and etching the top layerin accordance with an embodiment of the present invention;

FIG. 9 illustrates the wafer after applying a conformal coating inaccordance with an embodiment of the present invention;

FIG. 10 illustrates the wafer after anisotropic etch-back of theconformal coating in accordance with an embodiment of the presentinvention;

FIG. 11 illustrates the wafer after material deposition andplanarization in accordance with an embodiment of the present invention;

FIG. 12 illustrates the wafer after anisotropicly etching holes fordiode formation in accordance with an embodiment of the presentinvention;

FIG. 13 illustrates the wafer after applying a bottom anti-reflectivecoating (“BARC”) in accordance with an embodiment of the presentinvention;

FIG. 14 illustrates the wafer after etch-back of the BARC layer andremoval of the hard-mask material in accordance with an embodiment ofthe present invention;

FIG. 15 illustrates the wafer after de-scum removal of the remainingBARC material in accordance with an embodiment of the present invention;

FIG. 16 illustrates the wafer after selective epitaxial silicon growthin accordance with an embodiment of the present invention;

FIG. 17 illustrates the wafer after planarization of the epi-silicon inaccordance with an embodiment of the present invention;

FIG. 18 illustrates the wafer after anisotropic etch-back of theepi-silicon to form cups in accordance with an embodiment of the presentinvention;

FIG. 19 illustrates the wafer after P-type implantation to form theanodes of the diodes in accordance with an embodiment of the presentinvention;

FIGS. 20A-20B illustrate the wafer after an isotropic etch which isselective to etch oxide faster than nitride in accordance with anembodiment of the present invention;

FIG. 21 illustrates the wafer after conformal deposition of nitride inaccordance with an embodiment of the present invention;

FIG. 22 illustrates the wafer after anisotropic etch-back of the nitridein accordance with an embodiment of the present invention;

FIG. 23 illustrates the wafer after ALD deposition of GST material inaccordance with an embodiment of the present invention;

FIG. 24 illustrates the wafer after GST planarization in accordance withan embodiment of the present invention;

FIGS. 25-43 illustrate alternative steps corresponding to the stepsdepicted in FIGS. 2-12 in accordance with an embodiment of the presentinvention;

FIG. 44 illustrates the wafer following formation of vias and metal 1 inaccordance with an embodiment of the present invention; and

FIG. 45 illustrates a block diagram of a memory array and surroundingcircuitry in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

Embodiments of the present invention include a means and method to formvery fine features in a semiconductor process as would be required forhigh-density electronic memory devices and to do so consistently.Consistency is especially important for resistive memory cells becausevariation in the processing of the individual memory cells can lead tovariation across the wafer and even across a single die that can resultin difficulty in calibrating the sense amp level of the output stage ofthe die. This is because a slight difference in the size of theresistive change memory element can result in a significant resistancedifference when reading. If this difference is too great from one areaon a given die to another, it can be difficult to set a threshold levelwhich determines the cross over point between a one bit and a zero bitLikewise, if the difference is too great from one area on a given die toanother, it can be difficult to set a programming voltage and/or currentlevel that will reliably set or reset the information storage element ata given bit location.

Photolithographic techniques will print features, but these featureswill have variation at their edges. This is typical of photolithography.This not much of a problem when the features are large relative to therange at the edges where this variation occurs, but as the featuresbecome very small, the variation of the edges becomes a much largerportion of the overall feature. Even when features are printed usingdouble-exposure techniques, this variation from each exposure of thedouble exposure pair will combine to create even greater variance. Topattern a hole for forming a memory cell consisting of a vertical diodeand phase-change memory element, photolithographic techniques are usedto double-pattern a square feature by first patterning a stripe in onedirection and then patterning a stripe in an orthogonal direction; wherethe two stripes overlap, a square is patterned. (Because of thevariation at the edges and the additive nature of the two exposures, thecorners are least exposed whereas the center is most exposed and, as aresult, a more circular feature will be created. This circular patternis desirable when fabricating a memory cell consisting of a verticaldiode and phase-change memory element, particularly because sharpercorners in the hole for which the diode is to be formed can result inmore stacking faults when depositing the semiconducting material to formthe diode—e.g., as will be the case when forming a silicon diode with anepitaxial deposition technique. However, when the memory cell elementsare formed by patterning and forming a line in one direction to overlapa line patterned and formed in an orthogonal direction, the corners willbe much sharper.) The present invention includes a means and method topattern less critical aspects of a pattern of features (such as thespaces between critically patterned lines) in a way that minimizesvariation of the more critical features such as conductive lines andmemory cell elements.

In one embodiment of the present invention, precision depositiontechniques are used to form an etch mask by sidewall deposition.Referring to FIG. 1, a portion of a partly processed silicon wafer 10 isdepicted showing part of a series of bitlines 11 that have been formedand that are separated by spaces 12 made of reverse doped silicon,shallow trench dielectric isolation (STI), or the like as is wellunderstood by those skilled in the art. FIG. 2 shows this portion of thewafer after depositing a series of electrically insulating layers suchas silicon oxide 21, silicon nitride 22, and silicon oxide 23; anynumber, type, or order of insulating layers are is within the scope ofthe present invention, however, and the present invention is not limitedto only the depicted layers. A layer of polysilicon 24 is deposited onthe insulating layers 21, 22, 23; this polysilicon layer 24 is laterused as a hardmask, as explained in greater detail below. As depicted inFIG. 3, the polysilicon 24 is patterned and etched into rows 31; theserows 31 are generally positioned above every other space 12 between thebitlines 11. By forming these polysilicon rows 31 above every otherspace 12 (each row 31 having generally the same width as the underlyingspace 12), the spaces 32 between the polysilicon rows 31 may be roughlythree times as wide as the polysilicon rows 31 themselves and, as aresult, the photolithographic difficulty to pattern these polysiliconrows 31 is reduced and double patterning to form these rows may beavoided.

In FIG. 4, a deposited layer of conformal silicon oxide 41 is depositedon top of the polysilicon 31 and silicon oxide 23. The conformal siliconoxide layer 41 may be deposited with a precision deposition process suchas atomic layer deposition (ALD) having a thickness equal to the desiredfeature size (in this case, a measure across the holes to be formed tofabricate the memory cells). This deposited layer of conformal siliconoxide 41 may be etched back (as depicted in FIG. 5) using (for example)a side-wall spacer etch-back technique as is well understood by thoseskilled in the art. A layer of polysilicon is next deposited across thewafer to fill in the spaces 52 between deposited sidewalls 51.

As shown in FIG. 6, the wafer is planarized (e.g., as bychemical-mechanical polishing or CMP) to form rows 61 of hardmaskmaterial above the spaces 12 between the bitlines 11. Note that there isnow a polysilicon row 61 above every space 12 between the bitlines 11;every other of these polysilicon rows 61 was formed by patterning theinitial layer of polysilicon 24 and the remaining rows were formed bydepositing polysilicon across the wafer to fill in the spaces 52 betweendeposited sidewalls 51.

In FIG. 7, a layer of polysilicon 71 is deposited in preparation ofgenerally repeating the steps depicted in FIGS. 3 through 6 for anorthogonal hardmask pattern.

As depicted in FIG. 8, this polysilicon 71 is patterned and etched intocolumns 81; these columns are generally positioned where every otherspace between the memory cells is to be formed. Each column 81 may havegenerally the same width as the desired memory cell space. The spaces 82between the polysilicon columns 81 may be roughly three times as wide asthe polysilicon columns 81 themselves and, as a result, thephotolithographic difficulty to pattern these polysilicon columns 81 isreduced and double patterning to form these columns may be avoided.

In FIG. 9, a deposited layer of conformal silicon oxide 91 is deposited.This layer may be deposited with a precision deposition process such asatomic-layer deposition (ALD) having a thickness equal to the desiredfeature size (in this case, the orthogonal measure across the holes tobe formed to fabricate the memory cells as was depicted in FIG. 4). Thisdeposited layer of conformal silicon oxide 91 is etched back (asdepicted in FIG. 10) using a side-wall spacer etch-back technique as iswell understood by those skilled in the art. A layer of polysilicon maybe next deposited across the wafer to fill in the spaces 102 betweendeposited sidewalls 101.

As shown in FIG. 11, the wafer is planarized (e.g., as bychemical-mechanical polishing or CMP) to form columns 111 of hardmaskmaterial to protect the spaces between the memory cells. Note that thereis now a polysilicon column 111 between every intended memory cell;every other of these polysilicon columns 111 was formed by patterningthe deposited layer of polysilicon 71 and the remaining rows were formedby depositing polysilicon across the wafer to fill in the spaces 102between deposited sidewalls 101.

In FIG. 12, a deep dielectric etch is performed to form holes 121 downto the bitlines 11 using the remaining polysilicon hardmask material inrows 61 and columns 111 (originally deposited in layers 24 and 71,respectively). Once the holes 121 are etched for the memory cellformation, the remaining hardmask polysilicon (in columns 61 and 111) onthe surface is removed by (for example) filling the holes with BARC 131(as depicted in FIG. 13). BARC may etch at a rate approximately equal tothat of the polysilicon hardmask material; a polysilicon/BARC etch,therefore, may remove the surface BARC and the polysilicon hardmaskmaterial remaining on the surface (and, in some embodiments, partlyremove the BARC material in the holes 121), as depicted in FIG. 14. Asdepicted in FIG. 15, any BARC remaining in the holes 121 may then beremoved with a descum step as is well understood by those skilled in theart. A selective epitaxial silicon growth step is may be used to growcrystalline silicon 161 in the holes all the way to the surface asdepicted in FIG. 16. This crystalline silicon 161 may be planarized(e.g., by CMP) as depicted in FIG. 17 and then partly etched back toform cups 181 as depicted in FIG. 18. An implant is next performed toform the P-N junction (or P-i-N junction) of the diodes. For example, ifthe bitlines 11 are formed of N-type silicon and the epitaxial siliconof the diodes is formed of intrinsic or N-type silicon, the anodes 191are created by implanting to turn the anodes (tops) of the diodes intoP-type silicon as shown in FIG. 19.

In FIG. 20A, the cups 181 are widened by an anisotropic etch, but thisetch is selective to etch oxide faster than nitride resulting in anarrow band 201 near the middle of the cup. That is, as also shown inFIG. 20B, a diameter D2 of the cups 181 is greater for the portions ofthe cups 181 in which the sidewalls of said cups 181 are constructedwith oxide, and a diameter D1 is smaller for the portion of the cups 181in which the sidewalls of said cups are constructed with nitride. Thisnarrowing near the center of the cup will result in an increase incurrent density in the final device. To further enhance this effect, aconformal layer of silicon nitride 211 is deposited (e.g., by ALD asdepicted in FIG. 21) and then etched back to expose the top contact 221of the diode's anode (e.g., by an isotropic spacer etchback as is wellknown to those skilled in the art as depicted in FIG. 22). Note thatthis etch back removes a portion of the nitride narrowing spacer band201 where a top surface of that spacer is exposed to this vertical etch.To prevent the removal of this narrowing band, the height of the initiallayer 22 must be large enough to absorb any over-etch needed to assurethat the anode contact is cleared. The cups are then filled by ALD orthe like with the information storage element material 231 such as achalcogenide alloy like GST as is known to those skilled in the art andas is depicted in FIG. 23. This is then planarized (e.g., by CMP) as isdepicted in FIG. 24 to form individual information storage elements 241at each memory cell. From this point to the end of the process, standardprocessing (e.g., back end of line, BEOL, processing) is utilized topattern and create top contacts and vias 441 and metal column lines 442for the cross-point selection of individual memory cells (as depicted inFIG. 44).

The above description of an embodiment of the present invention enablesthe patterning and creation of memory cell elements using only twocritical masks and in a way that creates the volume in which the cell iscreated such that the dimensions of that volume do not suffer from thevariation inherent in a photolithographic patterning process. The widthand length of the volume in which the memory cell is formed isdetermined by the thickness in conformal deposition steps (as depictedin FIGS. 4 and 9). While this sequence of steps results in a preciselydimensioned opening in which to form a memory cell, the squared offcorners surrounding the volume wherein the epitaxially grown silicon forthe diodes is deposited may result in stacking faults in that depositedsilicon which could cause leakage currents. To address this, a slightmodification to the above sequence of steps enables rounding of thesecorners while keeping the essence of the present invention as describedabove. A first such modification approach would be to add a spacerdeposition and etch back sequence, as is done around the gates of smallfeature MOS transistors and is well known to those skilled in the art.This would involve depositing a thin conformal coating of nitride orother non-conductive or dielectric material in the hole prior toepi-silicon growth (i.e., at the point depicted by FIG. 15). Such aconformal deposition (very much like the conformal deposition depictedat FIG. 21) will not significantly reduce the size of the hole opening,but will be thickest in the corners of the hole where the materialcontacts two walls, resulting in a rounding of those corners. Thisdeposition would be followed by a brief isotropic etch (very much likethe conformal deposition depicted at FIG. 22) to clear the siliconsurface at the bottom of the hole where the epi-silicon would beselectively grown. A second modification approach is as follows.

FIG. 25 again shows this portion of the wafer at the point after thatdepicted in FIG. 1. In this instance, a series of layers such as siliconoxide 251, silicon nitride 252, silicon oxide 253, polysilicon 254 (tobe used later as a hardmask), and silicon oxide top mask material 255 isdeposited. This top mask oxide material 255 is patterned and etched intorows 261 (these rows are generally positioned above every other space 12between the bitlines 11. As depicted in FIG. 26, by forming these topmask oxide material rows 261 above every other space 12 (each row 261having generally the same width as the underlying space 12 less a“cushion thickness”, as described below), the spaces 262 between the topmask oxide material rows 261 are be more than three times as wide as thetop mask oxide material rows 261 themselves and, as a result, thephotolithographic difficulty to pattern these top mask oxide materialrows 261 is reduced, and double patterning to form these rows may beavoided. Note that the reduction of the width of the rows by a “cushionthickness” may be achieved by slightly overexposing thephotolithographic patterning of those rows. This “cushion thickness” isput back (as depicted in FIG. 27) with the deposition (e.g., by ALD) ofa conformal layer of silicon oxide 271 equal in thickness to that“cushion thickness.” While this restores the width of the rows to thatwhich was patterned according to the steps corresponding to FIG. 3, thebenefit is that in this case, a layer of etch stop material 271 isformed in the bottom of the spaces 262. In FIG. 28, this etch stop layer271 is more easily visible under a deposited layer of conformalpolysilicon 281. This etch stop layer 271 is deposited with a precisiondeposition process such as atomic layer deposition (ALD) having athickness equal to the desired feature size (in this case, a measureacross the holes to be formed to fabricate the memory cells). Thisdeposited etch stop layer of conformal polysilicon 281 is etched back(as depicted in FIG. 29) using a side-wall spacer etch-back technique asis well understood by those skilled in the art. A layer of silicon oxide301 is next deposited across the wafer to fill in the spaces 292 betweendeposited sidewalls 291, as shown in FIGS. 29 and 30.

As shown in FIG. 31, the wafer is planarized (e.g., as bychemical-mechanical polishing, CMP) to form rows 311 of hardmaskmaterial above the bitlines 11. Note that there is now a polysilicon row311 above each bitline 11; these polysilicon rows 311 were formed byforming rows of sidewall spacers from the deposited layer of polysilicon281.

In FIG. 32, a layer of polysilicon 321 is deposited to form an etch stopand, in FIG. 33, a layer of silicon oxide 331 is deposited inpreparation of generally repeating the steps depicted in FIGS. 26through 31 for an orthogonal hardmask pattern.

As depicted in FIG. 34, this silicon oxide 331 is patterned and etchedinto columns 341 (these columns are generally positioned where everyother space between the memory cells are to be formed). As was depictedin FIG. 26 and as is now depicted here in FIG. 34, by forming these topmask oxide material columns 341 above every other space between thememory cells (each column 341 having generally the same width as theunderlying space between the memory cells less a “cushion thickness,” aswas described above), the spaces 342 between the top mask oxide materialcolumns 341 may be more than three times as wide as the top mask oxidematerial columns 341 themselves and, as a result, the photolithographicdifficulty to pattern these top mask oxide material columns 341 isreduced and double patterning to form these columns may well be avoided.Note that the reduction of the width of the columns by a “cushionthickness” can be achieved by slightly overexposing thephotolithographic patterning of those columns. This “cushion thickness”is put back (as depicted in FIG. 35) with the deposition (e.g., by ALD)of a conformal layer of silicon oxide 351 equal in thickness to that“cushion thickness.” While this restores the width of the columns tothat which was patterned according to the steps corresponding to FIG. 3,the benefit is that in this case, a layer of etch stop material 351 isformed in the bottom of the spaces 342. In FIG. 35, this etch stop layer351 is more easily visible under a deposited layer of conformalpolysilicon 352. This etch stop layer 352 is deposited with a precisiondeposition process such as atomic-layer deposition (ALD) having athickness equal to the desired feature size (in this case, a measureacross the holes to be formed to fabricate the memory cells). Thisdeposited etch stop layer of conformal polysilicon 352 is etched back(as depicted in FIG. 36) using a side-wall spacer etch-back technique asis well understood by those skilled in the art. A layer of silicon oxideis next deposited across the wafer to fill in the spaces 362 betweendeposited sidewalls 361.

As shown in FIG. 37, the wafer is planarized (e.g., bychemical-mechanical polishing or CMP) to form columns 371 of hardmaskmaterial above the spaces between the memory cells, similar to (butorthogonal to) the rows of hardmask material depicted in FIG. 31.

FIG. 38 depicts a series of directional (i.e., anisotropic) etchesalternating between oxide etches and silicon etches. In FIG. 38A, anoxide etch removes surface oxide to stop on and expose the underlyinghardmask layer formed of polysilicon 321 and 311. In FIG. 38B, a siliconetch removes now-exposed hardmask material, stopping on oxide. In FIG.38C, this oxide-stopping material is removed using another oxide etch tostop on and expose a second complex hardmask. In FIG. 38D, a short-timedsilicon etch is performed, timed to just remove the surface hardmaskmaterial that connects the small cubes of surface hardmask materialabove each memory cell. Finally, in FIG. 38E, an oxide etch removes anyremaining surface oxide.

FIG. 39 depicts the wafer following a short non-directional (i.e.,isotropic) etch. This brief, timed etch removes a small amount of theexposed hardmask material such that the corners of the structures (whichare exposed on two sides) are removed faster and, resultantly, arerounded off. This step is followed by the deposition of a conformallayer of oxide 401 (as depicted in FIG. 40) which is then planarized (asdepicted in FIG. 41) resulting in a square (with rounded corners) 411 ofhardmask material above each memory cell surrounded by oxide 412. Thisoxide 412 may serve as an etchmask when openings are formed throughhardmask layer 254 (as depicted in FIG. 42); the resulting hardmaskformed from layer 254 facilitates the formation of deep holes (throughlayers 253, 252 and 251) to form the memory cells.

First, as depicted in FIG. 42A, the exposed round-corner squares ofhardmask material are removed using a silicon etch. Second, as depictedin FIG. 42B, a brief, timed oxide etch removes the small layer of oxideremaining below each of the exposed round-corner squares of hardmaskmaterial just removed, but without removing all of the oxide that wasbetween the exposed round-corner squares of hardmask material justremoved. Alternatively, the exposed round-corner squares of hardmaskmaterial and the small layer of oxide remaining below each of theexposed round-corner squares of hardmask material may be removed byextending the planarization step described in the step corresponding toFIG. 41. As depicted in FIG. 42C, a directional (i.e., anisotropic)silicon etch is next used to remove the hardmask material above eachmemory cell. Optionally, as depicted in FIG. 42D, a briefnon-directional (i.e., isotropic) silicon etch may also be performed tofurther round the corners of the openings in the hardmask layer.Finally, as depicted in FIG. 43 (as was done in the step correspondingto FIG. 12), a deep dielectric etch is performed to form holes 431 downto the bitlines 11 using the remaining polysilicon hardmask materialfrom layer 254. Once the holes 431 are etched for the memory cellformation, the process continues with those steps corresponding to FIGS.13 through 24, and then, from that point to the end of the process usingstandard processing (e.g., back end of line or “BEOL” processing) topattern and create top contacts and metal column lines for thecross-point selection of individual memory cells (as depicted in FIG.44).

The present invention may be used to implement cross-point memory arrayswherein the memory arrays' surrounding circuitry is also implementedusing embodiments of the present invention; these arrays may be one ofmany tiles or sub-arrays in a larger device or an array within a 3-Darrangement of arrays or tiles. In such a memory device, the storagecells can incorporate field-emitters, diodes or other non-linearconductor devices that conduct current better in one direction than theother for a given applied voltage. The non-linear conductive devices ofthe memory array, while typically include diodes, may alternatively beconstructed as three-layer devices (e.g., bipolar transistors) orfour-layer devices (e.g., P-N-P-N diodes or SCRs). FIG. 45, for example,is a block diagram of an array 500 constructed in accordance with any ofthe above embodiments of the present invention; a row read-write circuit502 and a column read-write circuit 504 may be similarly constructed.The row/column circuits 502, 504 may include sense amps, drivers, or anyother such circuits known in the art. Other circuits 506 may also beincluded, such as memory/bus I/O circuits or any other circuits known inthe art.

The storage element may be a fuse, an antifuse, a resistance-changematerial such as a phase-change material (including a chalcogenide inwhich the programmed resistivity can be one of two resistance valuesand, in the case of more than one bit per cell storage cells, in whichthe programmed resistivity can be one of three or more resistancevalues), a resistance that can be altered electrically or by heating, ora field-emitter element programming mechanism including an element forwhich the resistance or the volume is changeable and programmable.

Memory devices incorporating embodiments of the present invention may beapplied to memory devices and systems for storing digital text, digitalbooks, digital music (such as MP3 players and cellular telephones),digital audio, digital photographs (wherein one or more digital stillimages can be stored including sequences of digital images), digitalvideo (such as personal entertainment devices), digital cartography(wherein one or more digital maps can be stored, such as GPS devices),and any other digital or digitized information as well as anycombinations thereof.

Devices incorporating embodiments of the present invention may beembedded or removable, and may be interchangeable among other devicesthat can access the data therein. Embodiments of the invention may bepackaged in any variety of industry-standard form factor, includingcompact flash, secure digital, multimedia cards, PCMCIA cards, memorystick, any of a large variety of integrated circuit packages includingball-grid arrays, dual in-line packages (DIPs), SOICs, PLCCs, TQFPs, andthe like, as well as in proprietary form factors and custom designedpackages. These packages can contain just the memory chip, multiplememory chips, one or more memory chips along with other logic devices orother storage devices such as PLD's, PLA's, micro-controllers,microprocessors, controller chips or chip-sets or other custom orstandard circuitry.

Systems incorporating memory devices comprising embodiments of thepresent invention have the advantages of high density, non-volatilememory. Such systems could provide long term storage as a solid statestorage device instead of or in addition to rotating media storage(e.g., magnetic disks, read only or read/write optical disks, and thelike) and/or network based storage. Such systems could be in the form ofa desk-top computer system, a hand-held device (such as a tabletcomputer or a laptop computer), a communication device (such as a cellphone, a smart phone, a portable wirelessly networked device for music,video or other purposes, or the like), and/or any other system baseddevice having data storage.

The foregoing description of an example of embodiments of the presentinvention; variations thereon have been presented for the purposes ofillustration and description. It is not intended to be exhaustive or tolimit the invention to the precise forms disclosed. Many modificationsand variations are possible in light of the above teaching. It isintended that the scope of the invention be limited not by this detaileddescription.

Certain embodiments of the present invention were described above. Itis, however, expressly noted that the present invention is not limitedto those embodiments, but rather the intention is that additions andmodifications to what was expressly described herein are also includedwithin the scope of the invention. Moreover, it is to be understood thatthe features of the various embodiments described herein were notmutually exclusive and can exist in various combinations andpermutations, even if such combinations or permutations were not madeexpress herein, without departing from the spirit and scope of theinvention. In fact, variations, modifications, and other implementationsof what was described herein will occur to those of ordinary skill inthe art without departing from the spirit and the scope of theinvention. As such, the invention is not to be defined only by thepreceding illustrative description.

What is claimed is: 1-20. (canceled)
 21. A method for forming an array,the method comprising: forming a plurality of rows of hardmask materialabove one or more layers of insulating material; forming a plurality ofcolumns of hardmask material above the plurality of rows of hardmaskmaterial; etching holes in the one or more layers of insulating materialusing the combined masking properties of the rows of hardmask materialand the columns of hardmask material; and forming memory cells in theholes, wherein a first subset of the plurality of rows are formed by alithographic step and wherein a second subset of the plurality of rowsare thereafter formed by a deposition step, and wherein the secondsubset of the plurality of rows are deposited between the first subsetof the plurality of rows.
 22. The method of claim 21, wherein a firstsubset of the plurality of rows are formed by a lithographic step andwherein a second subset of the plurality of rows are thereafter formedby a deposition step.
 23. The method of claim 22, wherein the firstsubset of the plurality of rows are separated by a distancecorresponding to at least double a distance between array bitlines. 24.The method of claim 22, wherein the deposition step comprises formingsidewall hardmask features on the sides the first subset of theplurality of rows and depositing the second subset of the plurality ofrows, wherein a thickness of sidewall material in the sidewall hardmaskfeatures is defined by the deposition step.
 25. The method of claim 21,wherein forming the plurality of rows of hardmask material comprisesforming a plurality of rows of insulating material and depositing alayer of hardmask material on top of the plurality of rows of insulatingmaterial.
 26. The method of claim 21, wherein a first subset of theplurality of columns are formed by a lithographic step and wherein asecond subset of the plurality of columns are thereafter formed by adeposition step.
 27. The method of claim 26, wherein the deposition stepcomprises forming sidewall hardmask features on the sides the firstsubset of the plurality of columns and depositing the second subset ofthe plurality of columns, wherein a thickness of sidewall material inthe sidewall hardmask features is defined by the deposition step. 28.The method of claim 21, wherein etching the holes comprises performing aselective etch of the insulating material, wherein the insulatingmaterial comprises at least two different types of insulating materials,and wherein the selectively etched hole comprises a first diameteretched in a first type of insulating material and a second diameterlarger than the first diameter etched in a second type of insulatingmaterial.
 29. The method of claim 21, further comprising forming anelectronic circuit in electrical communication with the array.
 30. Anelectronic circuit in the form of an array comprising features that havebeen formed by forming a plurality of rows of hardmask material aboveone or more layers of insulating material, forming a plurality ofcolumns of hardmask material above the plurality of rows of hardmaskmaterial, etching holes in the one or more layers of insulating materialusing the combined masking properties of the rows of hardmask materialand the columns of hardmask material, and forming memory cells in theholes, wherein a first subset of the plurality of rows are formed by alithographic step and wherein a second subset of the plurality of rowsare thereafter formed by a deposition step, and wherein the secondsubset of the plurality of rows are deposited between the first subsetof the plurality of rows.
 31. The electronic circuit of claim 30,wherein forming the plurality of rows of hardmask material comprisesforming a plurality of rows of insulating material and depositing alayer of hardmask material on top of the plurality of rows of insulatingmaterial
 32. The electronic circuit of claim 30, wherein the firstsubset of the plurality of rows are separated by a distancecorresponding to double a distance between array bitlines.
 33. Theelectronic circuit of claim 30, wherein a first subset of the pluralityof rows are formed by a lithographic step and wherein a second subset ofthe plurality of rows are thereafter formed by a deposition step. 34.The electronic circuit of claim 33, wherein the deposition stepcomprises forming sidewall hardmask features on the sides the firstsubset of the plurality of rows and depositing the second subset of theplurality of rows, wherein a thickness of sidewall material in thesidewall hardmask features is defined by the deposition step.
 35. Theelectronic circuit of claim 30, wherein a first subset of the pluralityof columns are formed by a lithographic step and wherein a second subsetof the plurality of columns are thereafter formed by a deposition step.36. The electronic circuit of claim 35, wherein the deposition stepcomprises forming sidewall hardmask features on the sides the firstsubset of the plurality of columns and depositing the second subset ofthe plurality of columns, wherein a thickness of sidewall material inthe sidewall hardmask features is defined by the deposition step.
 37. Anelectronic system comprising one or more array circuits, the arraycircuits comprising features that have been formed by forming aplurality of rows of hardmask material above one or more layers ofinsulating material, forming a plurality of columns of hardmask materialabove the plurality of rows of hardmask material, etching holes in theone or more layers of insulating material using the combined maskingproperties of the rows of hardmask material and the columns of hardmaskmaterial, and forming memory cells in the holes, wherein a first subsetof the plurality of rows are formed by a lithographic step and wherein asecond subset of the plurality of rows are thereafter formed by adeposition step, and wherein the second subset of the plurality of rowsare deposited between the first subset of the plurality of rows.
 38. Theelectronic system of claim 37, wherein forming the plurality of rows ofhardmask material comprises forming a plurality of rows of insulatingmaterial and depositing a layer of hardmask material on top of theplurality of rows of insulating material
 39. The electronic system ofclaim 37, wherein the first subset of the plurality of rows areseparated by a distance corresponding to double a distance between arraybitlines.
 40. The electronic system of claim 37, wherein a first subsetof the plurality of rows are formed by a lithographic step and wherein asecond subset of the plurality of rows are thereafter formed by adeposition step.
 41. The electronic system of claim 40, wherein a firstsubset of the plurality of rows are formed by a lithographic step andwherein a second subset of the plurality of rows are thereafter formedby a deposition step.
 42. The electronic system of claim 41, wherein thedeposition step comprises forming sidewall hardmask features on thesides the first subset of the plurality of rows and depositing thesecond subset of the plurality of rows, wherein a thickness of sidewallmaterial in the sidewall hardmask features is defined by the depositionstep.
 43. The electronic system of claim 40, wherein a first subset ofthe plurality of columns are formed by a lithographic step and wherein asecond subset of the plurality of columns are thereafter formed by adeposition step.
 44. The electronic system of claim 43, wherein thedeposition step comprises forming sidewall hardmask features on thesides the first subset of the plurality of columns and depositing thesecond subset of the plurality of columns, wherein a thickness ofsidewall material in the sidewall hardmask features is defined by thedeposition step.
 45. The electronic circuit of claim 37, wherein theholes in which memory cells are formed have corners and these cornersare rounded.